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| NSS12501UW3T2G 12 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 12 VOLTS, 7.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 31 mW COLLECTOR 3 1 BASE 2 EMITTER 3 * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 12 12 6.0 5.0 7.0 Unit Vdc Vdc Vdc Adc A 2 1 WDFN3 CASE 506AU HBM Class 3B MM Class C MARKING DIAGRAM VF MG G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead #1 Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL (Note 2) TJ, Tstg Max 875 7.0 143 1.5 11.8 85 23 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W C 1 VF = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS12501UW3T2G Package WDFN3 (Pb-Free) Shipping 3000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 May, 2007 - Rev. 2 Publication Order Number: NSS12501UW3/D NSS12501UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 12 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.020 A) (IC = 3.0 A, IB = 0.030 A) (IC = 4.0 A, IB = 0.400 A) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.01 A) Base-Emitter Turn-on Voltage (Note 3) (IC = 2.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. td tr ts tf 90 100 320 100 ns ns ns ns hFE 200 200 200 200 200 VCE(sat) VBE(sat) VBE(on) fT 150 Cibo Cobo 650 120 pF pF 0.730 0.900 MHz 0.760 0.900 V 0.007 0.031 0.045 0.070 0.100 0.100 0.008 0.035 0.060 0.100 0.120 0.120 V 345 330 315 V V(BR)CEO 12 V(BR)CBO 12 V(BR)EBO 6.0 ICBO IEBO 0.1 0.1 mAdc mAdc Vdc Vdc Vdc Symbol Min Typical Max Unit http://onsemi.com 2 NSS12501UW3T2G 0.15 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE(sat) = 150C 25C 0.10 0.2 IC/IB = 100 150C 0.15 0.1 -55 C 0.05 0.05 VCE(sat) = -55C 25C 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 625 575 hFE, DC CURRENT GAIN 525 475 425 375 325 275 225 175 125 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) -55 C (5 V) -55 C (2 V) 25C (5 V) 25C (2 V) 150C (5 V) 150C (2 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 25C 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 150C -55 C IC/IB = 10 Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.0 VCE = 2.0 V 0.9 0.8 0.7 25C 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 150C -55 C VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 10 mA 0.8 100 mA 300 mA IC = 500 mA 0.6 0.4 0.2 0 0.01 0.1 1.0 10 100 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current http://onsemi.com 3 Figure 6. Saturation Region NSS12501UW3T2G 675 625 575 525 475 425 375 325 275 0 1.0 2.0 3.0 4.0 5.0 6.0 VEB, EMITTER BASE VOLTAGE (V) Cibo (pF) Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 140 130 120 110 100 90 80 70 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VCB, COLLECTOR BASE VOLTAGE (V) Cobo (pF) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 mS 1 IC (A) 10 mS 100 mS 1.0 S Thermal Limit Single Pulse Test at Tamb = 25C 0.1 0.01 0.01 0.1 1.0 VCE (Vdc) 10 100 Figure 9. Safe Operating Area http://onsemi.com 4 NSS12501UW3T2G PACKAGE DIMENSIONS WDFN3 CASE 506AU-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L MIN 0.70 0.00 0.25 1.40 0.90 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 0.010 INCHES NOM 0.030 MAX 0.031 0.002 0.014 0.063 0.043 D A B PIN ONE REFERENCE E 2X 0.10 C 2X 0.35 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.10 C 0.10 C 8X 0.08 C SEATING PLANE A1 2X L K 0.400 1.600 E2 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.275 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative CCCC CCCC CCCC CCCC D2 e 1 0.018 TOP VIEW SOLDERING FOOTPRINT* A 2X 1.300 0.400 0.600 C 0.250 1.100 0.300 SIDE VIEW (A3) e/2 2 3 3X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW http://onsemi.com 5 NSS12501UW3/D |
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